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Structural and electrical characteristics of InGaAsN layers grown by LPE

Identifieur interne : 001512 ( Main/Repository ); précédent : 001511; suivant : 001513

Structural and electrical characteristics of InGaAsN layers grown by LPE

Auteurs : RBID : Pascal:12-0194888

Descripteurs français

Pascal (Inist)
- Caractéristique électrique, Epitaxie phase liquide, Propriété transport, Addition étain, Condition opératoire, Miroir, Diffraction RX, Accommodation réseau, Microscopie force atomique, Rugosité, Caractéristique capacité tension, Effet Hall, Porteur libre, Densité porteur charge, Nitrure d'indium, Nitrure de gallium, Arséniure d'indium, Arséniure de gallium, Séléniure de calcium, Mobilité électron, InGaAsN, CaSe, 6855J, 8115L.

English descriptors

KwdEn :
- Atomic force microscopy, CV characteristic, Calcium selenides, Carrier density, Electrical characteristic, Electron mobility, Free carrier, Gallium arsenides, Gallium nitride, Hall effect, Indium arsenides, Indium nitride, LPE, Mirrors, Mismatch lattice, Operating conditions, Roughness, Tin additions, Transport properties, XRD.

Abstract

Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN layers grown by low-temperature LPE have been studied and related to the growth conditions. In the case of lattice matching, flat and uniform mirror-like layers of 8-10 μm in thickness are obtained. The compositions of the layers under study have been determined by combination of X-ray microanalysis and X-ray diffraction methods to be In_0.035Ga_0.065As_0.086N₀₀₁₄. The lattice mismatch between layer and substrate Δa_l/a_s calculated from X-ray diffraction curves is less than-7 x 10^-4 for all samples. The layers grown at lower epitaxy temperatures exhibit the highest crystalline quality, better lattice match and better homogeneity. This is in good agreement with the results of morphological study by atomic force microscopy which show root mean-square surface roughness of 0.18 nm for the best layers. CV and Hall measurements reveal that intentionally undoped InGaAsN layers are n-type with free carrier concentration about one order of magnitude higher in comparison to layers not containing nitrogen and high electron mobility values over 2000 cm²/Vs. A dramatic reduction in the free carrier concentration and slightly increase in mobility are observed for Sn-doped InGaAsN layers.

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Le document en format XML

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<author><name sortKey="Milanova, M" uniqKey="Milanova M">M. Milanova</name>
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<author><name sortKey="Vitanov, P" uniqKey="Vitanov P">P. Vitanov</name>
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<author><name sortKey="Terziyska, P" uniqKey="Terziyska P">P. Terziyska</name>
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<s3>CAN</s3>
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<author><name sortKey="Popov, G" uniqKey="Popov G">G. Popov</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Central Laboratory of Applied Physics, 59 St. Petersburg Blvd</s1>
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<author><name sortKey="Koleva, G" uniqKey="Koleva G">G. Koleva</name>
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<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term>
<term>CV characteristic</term>
<term>Calcium selenides</term>
<term>Carrier density</term>
<term>Electrical characteristic</term>
<term>Electron mobility</term>
<term>Free carrier</term>
<term>Gallium arsenides</term>
<term>Gallium nitride</term>
<term>Hall effect</term>
<term>Indium arsenides</term>
<term>Indium nitride</term>
<term>LPE</term>
<term>Mirrors</term>
<term>Mismatch lattice</term>
<term>Operating conditions</term>
<term>Roughness</term>
<term>Tin additions</term>
<term>Transport properties</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term>
<term>Epitaxie phase liquide</term>
<term>Propriété transport</term>
<term>Addition étain</term>
<term>Condition opératoire</term>
<term>Miroir</term>
<term>Diffraction RX</term>
<term>Accommodation réseau</term>
<term>Microscopie force atomique</term>
<term>Rugosité</term>
<term>Caractéristique capacité tension</term>
<term>Effet Hall</term>
<term>Porteur libre</term>
<term>Densité porteur charge</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>Arséniure d'indium</term>
<term>Arséniure de gallium</term>
<term>Séléniure de calcium</term>
<term>Mobilité électron</term>
<term>InGaAsN</term>
<term>CaSe</term>
<term>6855J</term>
<term>8115L</term>
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<front><div type="abstract" xml:lang="en">Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN layers grown by low-temperature LPE have been studied and related to the growth conditions. In the case of lattice matching, flat and uniform mirror-like layers of 8-10 μm in thickness are obtained. The compositions of the layers under study have been determined by combination of X-ray microanalysis and X-ray diffraction methods to be In<sub>0.035</sub>
Ga<sub>0.065</sub>
As<sub>0.086</sub>
N<sub>0014</sub>
. The lattice mismatch between layer and substrate Δa<sub>l</sub>
/a<sub>s</sub>
 calculated from X-ray diffraction curves is less than-7 x 10<sup>-4</sup>
 for all samples. The layers grown at lower epitaxy temperatures exhibit the highest crystalline quality, better lattice match and better homogeneity. This is in good agreement with the results of morphological study by atomic force microscopy which show root mean-square surface roughness of 0.18 nm for the best layers. CV and Hall measurements reveal that intentionally undoped InGaAsN layers are n-type with free carrier concentration about one order of magnitude higher in comparison to layers not containing nitrogen and high electron mobility values over 2000 cm<sup>2</sup>
/Vs. A dramatic reduction in the free carrier concentration and slightly increase in mobility are observed for Sn-doped InGaAsN layers.</div>
</front>
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<fA14 i1="01"><s1>Central Laboratory of Applied Physics, 59 St. Petersburg Blvd</s1>
<s2>4000 Plovdiv</s2>
<s3>BGR</s3>
<sZ>1 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Central Laboratory of Solar Energy and New Energy Sources, 72 Tzarigradsko Chaussee Blvd</s1>
<s2>1784 Sofia</s2>
<s3>BGR</s3>
<sZ>2 aut.</sZ>
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<fA14 i1="03"><s1>Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd</s1>
<s2>Thunder Bay, ON P7B 5Z5</s2>
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<fC01 i1="01" l="ENG"><s0>Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN layers grown by low-temperature LPE have been studied and related to the growth conditions. In the case of lattice matching, flat and uniform mirror-like layers of 8-10 μm in thickness are obtained. The compositions of the layers under study have been determined by combination of X-ray microanalysis and X-ray diffraction methods to be In<sub>0.035</sub>
Ga<sub>0.065</sub>
As<sub>0.086</sub>
N<sub>0014</sub>
. The lattice mismatch between layer and substrate Δa<sub>l</sub>
/a<sub>s</sub>
 calculated from X-ray diffraction curves is less than-7 x 10<sup>-4</sup>
 for all samples. The layers grown at lower epitaxy temperatures exhibit the highest crystalline quality, better lattice match and better homogeneity. This is in good agreement with the results of morphological study by atomic force microscopy which show root mean-square surface roughness of 0.18 nm for the best layers. CV and Hall measurements reveal that intentionally undoped InGaAsN layers are n-type with free carrier concentration about one order of magnitude higher in comparison to layers not containing nitrogen and high electron mobility values over 2000 cm<sup>2</sup>
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<s5>03</s5>
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<s5>03</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Addition étain</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Tin additions</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Condition opératoire</s0>
<s5>05</s5>
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<fC03 i1="05" i2="X" l="ENG"><s0>Operating conditions</s0>
<s5>05</s5>
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<s5>08</s5>
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<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<s5>12</s5>
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<s5>12</s5>
</fC03>
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<s5>13</s5>
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<s5>13</s5>
</fC03>
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<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
</fC03>
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<s5>16</s5>
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<s2>NK</s2>
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<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>18</s5>
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<s2>NK</s2>
<s5>18</s5>
</fC03>
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<s5>19</s5>
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<s5>29</s5>
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<s5>29</s5>
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<fC03 i1="21" i2="3" l="FRE"><s0>InGaAsN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>CaSe</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>6855J</s0>
<s4>INC</s4>
<s5>65</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>8115L</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fN21><s1>149</s1>
</fN21>
</pA>
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Structural and electrical characteristics of InGaAsN layers grown by LPE

Structural and electrical characteristics of InGaAsN layers grown by LPE

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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